| PART |
Description |
Maker |
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| UPG2012TK UPG2012TK-E2 |
NECs W SINGLE CONTROL L, S-BAND SPDT SWITCH
NECs ? W SINGLE CONTROL L, S-BAND SPDT SWITCH
|
NEC[NEC]
|
| NE52418 NE52418-T1-A NE52418-A |
NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
|
California Eastern Laboratories
Duracell
California Eastern Labs
|
| UPC1688 UPC1688G-TI UPC1688G-T1-A |
NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER 邻舍1.0 GHz的带宽硅MMIC放大
100 MHz - 700 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 39, SOT-143, 4 PIN
|
NEC, Corp.
Duracell
NEC[NEC]
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| TLP2418 |
PHOTOCOUPLER GaA?As Ired & PHOTO-IC
|
Toshiba Semiconductor
|
| TLP2451 |
Photocoupler GaA??s IRED Photo IC
|
Toshiba Semiconductor
|
| TLP559 |
Photocoupler GaA .As Ired & Photo IC
|
TOSHIBA
|
